利用数值模拟研究了碲化镉在垂直Bridgman炉中生长时的固-液界面的形状.采用焓-多孔介质法,在固定网格上对碲化镉的固液两相用统一的控制方程进行了整场求解,用一特征参数确定界面的位置和形状.结果表明,当晶体的生长速率较低时,界面的形状与物质在固态和液态两相下的热扩散率有关.如果两种热扩散率的数值相近,界面的形状是平坦的.液态区自然对流是界面形状的影响因素之一,而积聚在固态区的结晶潜热是形成弯曲固-液界面的主要原因.
参考文献
[1] | R.A.Brown,AIChE (American Institute of Chemical Engineers) J.,34(6),881(1988) |
[2] | L.Y.Chin,F.M.Calson,J.Crystal Growth,62,561(1983) |
[3] | S.Kuppurao,S.Brandon,J.J.Derby,J.Crystal Growth,155,93(1995) |
[4] | S.Kuppurao,S.Brandon,J.J.Derby,J.Crystal Growth,155,103(1995) |
[5] | C.W.Lan,J.Crystal Growth,229,595(2001) |
[6] | C.W.Lan,B.C.Yeh,J.Crystal Growth,266,200(2004) |
[7] | WANG Peilin,WEI Ke,ZHOU Shiren,Chinese Journal of Semiconductors,15(9),596(1994)(王培林,魏科,周士仁,半导体学报,15(9),596(1994)) |
[8] | WANG Peilin,WEI Ke,ZHANG Guoyan,ZHOU Shiren,Chinese Journal of Materials Research,8(5),413(1994)(王培林,魏科,张国艳,周士仁,材料研究学报,8(5),413(1994)) |
[9] | WEI Yanfeng,FANG Weizheng,ZHANG Xiaoping,YANG Jianrong,HE Li,Chinese Journal of Semiconductors,22(7),853(2001)(魏彦峰,方维政,张小平,杨建荣,何力,半导体学报,22(7),853(2001)) |
[10] | WANG Peilin,DENG Kaiju,ZHANG Guoyan,ZHOU Shiren,Chinese Journal of Semiconductors,17(1),16(1996)(王培林,邓开举,张国艳,周士仁,半导体学报,17(1),16(1996)) |
[11] | WANG Peilin,ZHANG Guoyan,ZHOU Shiren,Chinese Journal of Semiconductors,17(7),486(1996)(王培林,张国艳,周士仁,半导体学报,17(7),486(1996)) |
[12] | LIU Juncheng,JIE Wanqi,ZHOU Yaohe,Chinese Journal of Materials Research,11,8(1997)(刘俊成,介万奇,周尧和,材料研究学报,11,8(1997)) |
[13] | LIU Juncheng,GU Zhi,JIE Wanqi,Chinese Journal of Materials Research,17(6),649(2003)(刘俊成,谷智,介万奇,材料研究学报,17(6),649(2003)) |
[14] | S.V.Patankar,Numerical Heat Transfer and Fluid Flow,(New York,McGraw-Hill,1980) p.285 |
[15] | A.J.Syllaios,P.K.Liao,B.J.Greene,H.F.Schaake,H.Y.Liu,G.Westphal,J.Electronic Materials,26,567(1997) |
[16] | V.R.Voller,C.Prakash,Int.J.Heat Mass Transfer,30,1709(1987) |
[17] | V.R.Voller,An Overview of Numerical Methods for Solving Phase Change Problems,in Advanced Numerical Heat Transfer Vol.1,edited by W.J.Minkowycz and E.M.Sparrow (Washington D.C.,Taylor & Francis,1996) p.341 |
[18] | W.Shyy,M.M.Rao,Microgravity Sci,and Tech.,7,41(1994) |
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