应用减压化学气相沉积技术,在弛豫Si0.7Ge0.3层/组分渐变Si1-xGex层/Si衬底这一多层复合结构的基础上制作了应变硅材料,其中组分渐变Si1-xGex层Ge的摩尔分数x从O线性增加到0.2.对该复合结构的性能进行了表征,由原子力显微镜和Raman光谱测试结果计算出应变硅层的表面粗糙度和应变度分别为4.12 nm和1.2%,材料中的位错密度为4×104cm-2.经受了高热开销过程后,应变硅层的应变度及其表面形貌基本上保持不变.
参考文献
| [1] | J.L.Hoyt,H.M.Nayfeh,S.Eguchi,I.Aberg,G.Xia,T.Drake,E.A.Fitzgerald,D.A.Antoniadis,Strained silicon MOSFET technology,IEDM Tech.Dig.,23～26(2002) |
| [2] | Jongwan Lee Jung,M.L.Lee,Yu Shaofeng,A.Fitzgerald,D.A.Antoniadis.Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex(x less than or equal y)virtual substrate,IEEE Electron Device Lett.,24(7),460(2003) |
| [3] | S.Takagi,T.Mizuno,T.Tezuka,N.Sugiyama,T.Numata,K.Usuda,Y.Moriyama,S.Nakaharai,J.Koga,A.Tanabe,N.Hirashita,T.Maeda,Channel structure design,fabrication and carrier transport properties of strained-Si/SiGe-on-insulator(strained-SOI)MOSFETs,IEDM Tech.Dig.,57～60(2003) |
| [4] | Goo Jung-Suk,Xiang Qi,Y.Takamura,Wang Haihong,J.Pan,F.Arasnia,E.N.Paton,P.Besser,M.V.Sidorov,E.Adem,A.Lochtefeld,G.Braithwaite,M.T.Currie,R.Hammond,M.T.Bulsara,Lin Ming-Ren,Scalability of strained-Si nMOSFETs down to 25 nm gate length,IEEE Electron Device Lett.,24(5),351(2003) |
| [5] | S.Hong,H.-W.Kim,D.K.Bae,S.C.Song,G.-D.Lee,E.Yoon,C.S.Kim,Y.L.Foo,J.E.Greene,Formation of flat,relaxed Si1-xGex alloys ou Si(001)without buffer layers,Appl.Phys.Lett.,88(12),122103(2006) |
| [6] | S.Hong,Y.L.Foo,K.A.Bratland,T.Spila,K.Ohmori,M.R.Jr Sardela,J.E.Greene,E.Yoon,Smooth relaxed Si0.75Ge0.25 layers on Si(001)via in situ rapid thermal annealing,Appl.Phys.Lett.,83(21),4321(2003) |
| [7] | J.Schmidt,G.Vogg,F.Bensch,S.Kreuzer,P.Ramm,S.Zollner,R.Liu,P.Wennekers,Spectroscopic techniques for characterization of high-mobility strained-Si CMOS,Materials Science in Semiconductor Processing,8,267(2005) |
| [8] | K.Rim,K.Chan,L.Shi,D.Boyd,J.Ott,N.Klymko,F.Cardone,L.Tai,S.Koester,M.Cobb,D.Canaperi,B.To,E.Duch,I.Babich,R.Carruthers,P.Saunders,G.Walker,Y.Zhang,M.Steen,M.Ieong,Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator(SSDOI)MOSFETs,IEDM Tech.Dig.,49-52(2003) |
| [9] | J.W.Matthews.A.E.Blakeslee.Defects in epitaxial multilayers I.Misfit dislocations,J.Cryst.Growth,27,118(1974) |
| [10] | E.A.Fitzgeraid,Y.H.Xie,D.Monroe,P.J.Silverman,J.M.Kuo,A.R.Kortan.F.A.Thiel,B.E.Wreir,Relaxed GexSi1-x structures for Ⅲ-Ⅴ integration with Si and high mobility two-dimensional electron gases in Si,J.Vac.Sci.Technol.B,10(4),1807(1992) |
| [11] | J.M.Hartmann,Y.Bogumilowicz,P.Holliger,F.Laugier,R.nuche,G.RDlland,M.N.Semeria,V.Renard,E.B.Olshanetsky,O.Estibals,Z.D.Kvon,J.C.Portal,L.Vincent,F.Cristiano,A.Claverie,Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices,Semicond.Sci.Technol.,19(3),311(2004) |
| [12] | J.W.P.Hsu,E.A.Fitzgerald,Y.H.Xie,P.J.Silverman,M.J.Cardillo,Surface morphology of related GexSi1-x film,Appl.Phys.Lett.,61(11),1293(1992) |
| [13] | M.Holtz,W.M.Duncan,S.Zollner,R.Liu,Visible and ultraviolet Ranlan scattering studies of Si1-xGex alloys,J.Appl.Phys Lett.,88(5),2523(2000) |
| [14] | T.S.Perova,K.Lyutovich,D.Potapova,C.P.Parry,E.Kasper,R.A.Moore,Strain and composition in thin SiGe buffer layers with high Ge content studied by micro-Rmnan spectroscope,in:Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Micmsystems,(2002)p.191～194 |
| [15] | Liu Ran,Canonico Michel,Applications of UV-Raman spectroscopy and high-resolution X-ray difiraction to microelectronic materials and devices,Microelectronie Engineering,75(3),243(2004) |
| [16] | J.Welser,J.L.Hoyt,S.Takagi,J.F.Gibbons,Strain dependence of the performance enhancement in strained-Si n-MOSFETs,IEDM Tech.Dig.,373～376(1994) |
| [17] | K.Rim,J.Welser,J.L.Hoyt,J.F.Gibbons,Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs,IEDM Tech.Dig.,517～520(1995) |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%