对单晶硅片进行不同剂量的碳离子注入,测量碳离子注入前后硅片的纳米硬度、弹性模量、硅表面与探针之间的摩擦系数和划痕深度以及硅片与Si3N4球的摩擦磨损,研究试样在过程中摩擦系数及磨损量的变化.结果表明,碳离子注入可能导致硅片表面结构的改变,从而影响了力学性能,但改善了微摩擦学特性.碳离子注入剂量为2×1015 ions/cm2时硅片的纳米硬度和弹性模量都明显降低,但其划痕摩擦系数和划痕深度均大于未注入硅片;碳离子注入后硅片的减摩效果和耐磨性能在小载荷下得到了大幅度提高,当载荷达到一定值后,摩擦系数迅速增加并产生磨损痕迹.其磨损机制在小载荷下以粘着磨损为主,在大载荷下以材料的微疲劳和微断裂为主.
参考文献
| [1] | LIU Ying,WEN Shizhu,Study on performances of microfriction and its control in MEMS,Chinese Journal of Mechanical Engineering,38(3),1(2002)(刘莹,温诗铸,微机电系统中微摩擦特性及控制研究,机械工程学报,38(3),1(2002)) |
| [2] | SUN Rong,XU Zhao,XUE Qunji,Research progress in surface modification and micro-tribological behaviour of single-crystal silicon.Tribology,24(4),382(2004)(孙蓉,徐洮,薛群基,单晶硅表面改性及其微观摩擦学性能研究进展,摩擦学学报,24(4),382(2004)) |
| [3] | LIAO Jiaxuan,LIU Weimin,XU Zhao,YAN Jie,XUE Qunji,Tribological properties of DLC nanolayer on Si prepared by plasm a-based ion implantation,Tribology,24(2),115(2004)(廖家轩,刘维民,徐洮,严洁,薛群基,单晶硅表面等离子体基离子注入碳纳米薄膜的摩擦学特性,摩擦学学报,24(2),115(2004)) |
| [4] | Gatzen H.H.,Beck M.,Investigations on the friction force anisotropy of the silicon lattice,Wear,254,1122(2003) |
| [5] | O.Benkherourou,S.Sahnoune,M.Djabi,J.-P.Deville,Analysis of photoemission lines in silicon nitrided layer formed by low-energy nitrgen ion implantation in silicon,Vacuum,53,427(1999) |
| [6] | M.Ueda,A.F.Beloto,H.Reuther,S.Parascandola,Plasma immersion ion implantation of nitrogen in Si:formation of SiO2,Si3N4 and stressed layers under thermal and sputtering effect,Surface and Coating Technology,136,244(2001) |
| [7] | D.J.Brink,J.Camassel,J.B.Malherbe,Formation of a surface SiC layer by carbon-ion implantation into silicon,Thin Solid Films,449,73(2004) |
| [8] | U.Preckwinkel,J.K.N.Lindner,B.Stritzker,B.Rauschenbach,Structure and strain measurements on SiC formed by carbon ion implantation.Nuclear Instruments and Methods in Physics Research,B120,125(1996) |
| [9] | Z.W.Deng,R.Souda,XPS studies on silicon carbonitride films prepared by sequential implantation of nitrogen and carbon into silicon,Diamond and Related Materials,11,1676(2002) |
| [10] | B.K.Gupta,Bharat Bhushan,Nanoindentation studies of ion implanted silicon,Surface and Coatings Technology,68-69,564(1994) |
| [11] | J.Lekki,Z.Stachura,N.Preikschas,B.Cleff,M.Cholewa,G.J.F.Legge,Friction and wear of argon-implanted silicon-crystals,Journal of Materials Research,9,91(1994) |
| [12] | P.Kodali,M.Hawley,K.C.Walter,K.Hubbard,N.Yu,J.R.Tesmer,T.E.Levine,M.Nastasi,Tribological properties of carbon-and nitrogen-implanted Si(100),Wear,205,144(1997) |
| [13] | Bharat Bhushan,S.Sundararajan,Micro/nanoscale friction and wear mechanisms of thin films using atomic force and friction force microscopy,Acta Materialia,46(11),3793(1998) |
| [14] | S.Sundararajan,Bharat Bhushan,Micro/nanotribological studies of polysilicon and SiC films for MEMS applications,Wear,217(2),251(1998) |
| [15] | Bharat Bhushan,V.N.Koinkar,Microtribological studies of doped single-crystal silicon and polysilicon films for MEMS devices,Sensors and Acruators A:Physical,57(2),91(1996) |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%