提出一种在ITO玻璃上电化学沉积制备单分散近球形硫化镉粒子的新方法.在S-CdCl2-DMSO电沉积体系中加入少量的水制备出单分散膜层,调节沉积电流、电沉积时间或Cd2+浓度可以改变膜层的粒子分布密度.结果表明,在电沉积的整个ITO玻璃表面上均分布有硫化镉沉积,且不同厚度膜层上的沉积其S与Cd的原子比不同.在电沉积硫化镉膜层上蒸镀铜酞菁制备出p-n异质结,其Ⅰ-Ⅴ特性表明,单分散近球形硫化镉膜层载流子的传输由带导电控制机制向跳跃导电控制机制转变.
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