用离子束溅射和后退火工艺制备了一种适用于微测辐射热探测器热敏材料的新型纳米结构二氧化钒(VO2)薄膜材料,薄膜具有平均粒度8 nm,在半导体相区具有电阻温度系数(TCR)为-7%/K,性能高于传统的VO2材料(平均粒度为1-2μm,在半导体相区具有TCR约为-2%/K).基于纳米结构的VO2薄膜材料的器件比基于传统的VO2薄膜材料具有更高的性能,而两者的噪声基本相当.
参考文献
| [1] | R.A.Wood,A high performance infrared imaging with monolithic silicon focal planes operating at room temperature,IEEE on IEDM,175(1993) |
| [2] | A.Tanaka,S.Mastsumoto,N.Tsukamoto,et al,Infrared focal plane array incorporating silicon IC process compatible bolometer,IEEE Trans.Electron Devices,431,1884(1996) |
| [3] | D.F.Murphy,M.Ray,R.Wyles,J.F.Asbrock,N.A.Lum,A.Kennedy,J.Wyles,C.Hewitt,G.Graham,W.Radford,J.Anderson,D.Bradley,R.Chin,Kostrzewa,High sensitivity (25 μm pitch) microbolometer FPAs,Proc.SPIE,4369,222(2001) |
| [4] | K.A.Hay,D.Van Deusen,Uncooled focal plane array detector development at InfraredVision Technology Corp.,Proc.SPIE.,5783,514(2005) |
| [5] | M.Z.Tidrow,W.W.Clark,W.Tipton,R.Hoffman,W,Beck,S.C.Tidrow,D.N.Robertson,H.Pollehn,Uncooled infrared detectors and focal plane arrays,SPIE,Vol.3553,178(1998) |
| [6] | CHEN Changhong,YI Xinjian,XIONG Bifeng,Infrared responsivity of uncooled VO2-based thin films bolometer,Acta Phys.Sin.,50,450(2001).(陈长虹,易新建,熊笔锋,基于VO2薄膜非致冷红外探测器光电响应研究,物理学报,50,450(2001)) |
| [7] | R.T.Rajendra kumar,B.Karunagaran,D.Mangalaraj,Sa.K.Narayandass,P.Manoravi,M.Joseph,and Vishnu Gopal,Study of a pulsed laser deposited vanadium oxide based microbolometer array,Smart Mater.Struct.,12,188(2003) |
| [8] | S.Sedky,P.Fiorini,K.Baert,L.Hermans,R.Mertens,Characterization and optimization of infrared SiGe bolometers,IEEE Trans.Electron Dev.,46,675(1999) |
| [9] | M.Almasri,D.P.Butler,Z.C.elik-Butler,Self-supporting uncooled infrared microbolometers with low-thermal mass,J.Microelectromech.Syst.,10,469(2001) |
| [10] | DOU Yanwei,HU Ming,CUI Meng,ZONG Yang,The performance of temperature-sensitive for Vox thin film resistances deposited on PS substrate,Chinese Journal OF Materials Research,20(5),496(2006).(窦雁巍,胡明,崔梦,宗扬,多孔硅表面氧化钒热敏电阻薄膜的阻温特性,材料研究学报,20(5),496(2006)) |
| [11] | WANG Lixia,LI Jianping,HE Xiuli,GAO Xiaoguang,Fabrication of vanadium dioxide films at low temperature and researches on properties of the films,Acta Phys.Sin.,55,2864(2006).(王利霞,李建平,何秀丽,高晓光,二氧化钒薄膜的低温制备及其性能研究,物理学报,55,2864(2004)) |
| [12] | LI Jinhua,YUAN Shouyi,Temperature coefficient of resistance of VO2 polycrystalline film formed by ion beam enhanced deposition,Acta Phys.Sin.,53,2683(2004).(李金华,袁守一,离子束增强沉积VO2多晶薄膜的温度系数,物理学报,53,2683(2004)) |
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