利用离子注入和后续高温退火的方法制备了包埋在二氧化硅(Si02)基质中的硅纳米晶,研究了不同离子注入浓度试样的微观结构和发光性能,以及硅纳米晶的生长机理和发光机制.结果表明:较小的硅纳米晶(<5 nm)其生长机理符合Ostwald熟化机理,较大的纳米晶(>10 nm)则是由多个小纳米晶粒通过孪晶组合或融合而成的;离子注入浓度为8×1016cm-2的样品其发光强度是离子注入浓度为3×1017cm-2样品发光强度的5倍;硅纳米晶内部的微观结构缺陷(如孪晶和层错)对其荧光强度有很大的影响.
参考文献
| [1] | International Technology Roadmap for Semiconductors,2005,website:http://www.itrs.net/Common/2005ITRS/Interconnect20005.pdf |
| [2] | T.S.Iwayama,S.Nakao,K.Saitoh,Visible photoluminescence in Si《'+》-implanted thermal oxide films on crystalline Si,Appl.Phys.Lett.,65,1814(1994) |
| [3] | Z.H.Lu,D.J.Lockwood,J.-M.Baribeau,Quantum confinement and light emission in SiO2/Si superlattices,Nature (London),378,258(1995) |
| [4] | S.Furukawa,T.Miyasato,Quantum size effects on the optical band gap of microcrystalline Si:H,Phys.Rev.B,38,5726(1998) |
| [5] | S.Haynshi,S.Tanimoto,M.Fujii,K.Yamamoto,Surface oxide layers of Si and Ge nanocrystals,Superlattices Microstruct.,8,13(1990) |
| [6] | H.Takagi,H.Ogawa,Y.Yamazaki,A.Ishizaki,T.Nakagiri,Quantum size effects on photoluminescence in ultrafine Si particles,Appl.Phys.Lett.,56,2379(1990) |
| [7] | Y.Q.Wang,R.Smirani,G.G.Ross,The effect of implantation dose on the microstructure of silicon nanocrystals in SiO2,Nanotechnology,15,1554 (2004) |
| [8] | F.Iacona,G.Franzo,C.Spinella,Correlation between luminescence and structural properties of Si nanocrystals,J.Apph Phys.,87,1295(2000) |
| [9] | G.Franzo,S.Boninelli,D.Pacifici,F.Priolo,F.Iacona,C.Bongiorno,Sensitizing properties of amorphous Si clusters on the 1.54μm luminescence of Er in Si-rich SiO2,Appl.Phys.Lett.,82,3871(2003) |
| [10] | F.Iacona,C.Bongiorno,C.Spinella,S.Boninelli,F.Priolo,Formation of evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films,J.Appl.Phys.,95,3723(2004) |
| [11] | W.Ostwald,Z.Phys,Chem.(Leipzig),34,495(1900) |
| [12] | R.F.Pinizzotto,H.Yang,J.M.Perez,J.L.Coffer,J.Appl.Phys.,75,4486(1994) |
| [13] | L.T.Canham,Luminescent bands and their proposed origins in highly porous silicon,Phys.Status Solidi B,190,9(1995) |
| [14] | L.N.Dinh,L.L.Chase,M.Balooch,W.J.Siekhaus,F.Wooten,Optical properties of passivated Si nanocrystals and SiOx uanostructures,Phys.Rev.B,54,5029(1996) |
| [15] | T.Shimizu-lwayama,N.Kurumado,D.E.Hole,P.D.Townsend,Optical properties of silicon uanoclusters fabricated by ion implantation,J.Appl.Phys.,83,6018(1998) |
| [16] | D.J.Eaglesham,A.E.White,L.C.Feldman,N.Moriya,D.C.Jacobson,Equilibrium shape of Si,Phys.Rev.Lett.,70,1643(1993) |
| [17] | W.Selke,P.M.Duxbury,Surface profle evolution above roughening,Z.Physik B,94,311(1994) |
| [18] | X.Yu,P.M.Duxbury,Kinetics of nonequilibrium shape change in gold clusters,Phys.Rev.B,52,2102(1995) |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%