采用磁控溅射方法在Si基底上制备SiC薄膜,研究了SiC薄膜经不同温度和气氛条件高温退火前后结构、成份的变化.结果表明,薄膜主要以非晶为主,由Si-C键,C-C键和少量Si的氧化物杂质组成;在真空条件下经高温退火后,薄膜C-C键的含量减少,而Si-C键的含量增加,真空退火有利于SiC的形成;在800℃空气中退火后,薄膜表面生成一层致密的SiO2薄层,阻止了氧气与薄膜内部深层的接触,有效保护了内部的SiC.在空气条件下,SiC薄膜在800℃具有较好的热稳定性.
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