应用光电化学响应法和Mott-Schottky曲线法,研究了Ni201在500℃空气中生成的氧化膜和在pH值为8.4的中性缓冲溶液中阳极氧化生成钝化膜的半导体性质,分析了Ni201表面钝化膜的结构和组成.Mott-Schottky曲线表明,Ni201在该中性溶液中生成钝化膜的平带电位约为0.40 V,其在500℃空气中生成的氧化膜的平带电位约为0.15 V,前者的载流子浓度约是后者的34倍.在中性缓冲溶液中生成钝化膜的光电流谱表明,Ni201的结构由内层NiO和外层Ni(OH)2构成,其带隙宽度分别为2.8和1.6 eV.其中,具有晶体结构的内层NiO的带隙宽度与Ni201在500℃空气中生成的氧化膜的带隙宽度2.4 eV相似.通过光电化学法和Mott-Schottky曲线建立Ni201表面钝化膜的电子能带结构模型,解释了其内层NiO和外层Ni(OH)2同是p型半导体组成的钝化膜的半导体性质.
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