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采用差示扫描量热法将焊点的熔化行为表征与焊点回流焊工艺相结合,研究了球栅阵列(BGA)结构单界面Sn-3.0Ag-0.5Cu/Cu微焊点在钎料熔化温度附近等温时效形成局部熔化焊点时的界面反应及界面金属间化合物(IMC)的生长行为.结果表明,在钎料熔点217℃时效时,焊点中钎料基体仅发生界面局部熔化;而在稍高于熔点的218℃时效时,焊点钎料基体中全部共晶相和部分β-Sn相发生熔化,且Cu基底层的消耗量显著增大,绝大部分Cu基底直接溶蚀进入钎料基体并导致界面IMC净生长厚度相对217℃时效时减小;等温时效温度升高至230℃时,焊点中钎料基体全部熔化,界面IMC厚度达到最大值.界面IMC的生长动力学研究结果表明,界面Cu6Sn5和Cu3Sn层的生长分别受晶界扩散和体积扩散控制,但界面IMC层的晶界凹槽、晶粒粗化和溶蚀等因素对其生长行为也有明显影响.

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