采用高功率脉冲磁控溅射(HIPIMS)技术在N2流量为10～50 mL/min下沉积TiSiN涂层,利用台阶仪,XRD,XPS,SPM,SEM,HRTEM和纳米压痕仪对涂层的沉积速率、相结构、成分、形貌和力学性能进行了分析,并研究了不同N2流量对等离子体放电特性的影响.结果表明,在不同N2流量下,TiSiN涂层均具有非晶Si3N4包裹纳米晶TiN复合结构,涂层表面粗糙度Ra为0.9～1.7 rnm;随N2流量的增加,等离子体的放电程度减弱,离化率降低,TiSiN涂层沉积速率降低,其Ti含量逐渐降低,Si含量逐渐增加,但变化幅度较小;涂层择优取向随N2流量的增加发生改变,晶粒尺寸逐渐增大,硬度和弹性模量逐渐降低,涂层硬度最高为(35.25±0.74) GPa.
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