为得到硅通孔电镀填充铜(TSV-Cu)的力学性能,对TSV-Cu进行了Berkovich纳米压痕实验.基于Oliver-Pharr算法和连续刚度法确定TSV-Cu的弹性模量和硬度分别为155.47 GPa和2.47 GPa;采用有限元数值模拟对纳米压痕加载过程进行反演分析,通过对比最大模拟载荷与最大实验载荷,确定TSV-Cu的特征应力和特征应变;由量纲函数确定的应变强化指数为0.4892;将上述实验结果代入幂强化模型中,确定TSV-Cu的屈服强度为47.91 MPa.最终确定了TSVCu的幂函数型弹塑性应力-应变关系.
参考文献
| [1] | Qin F,Wang J,Wan L X,Yu D Q,Cao L Q,Zhu W H.Semicond Technol,2012; 37:825(秦飞,王珺,万里兮,于大全,曹立强,朱文辉.半导体技术,2012; 37:825) |
| [2] | Wu B,Kumar A,Pamarthy S.J Appl Phys,2010; 108:051101 |
| [3] | Ege E S,Shen Y L.J Electron Mater,2003; 32:1000 |
| [4] | Shen Y L,Ramamurty U.J Appl Phys,2003; 93:1806 |
| [5] | Okoro C,Vanstreels K,Labie R,Liihn O,Vandevelde B,Verlinden B,Vandepitte D.JMicromech Microeng,2010; 20:045032 |
| [6] | Xu L,Dixit P,Miao J,Pang J H L,Zhang X,Tu K N,Preisser R.Appl Phys Lett,2007; 90:033111 |
| [7] | Dixit P,Xu L,Miao J,Pang J H L,Preisser R.J Micromech Microeng,2007; 17:1749 |
| [8] | Li J Y,Wang H,Wang S,Wang H Y,Cheng P,Zhang Z J,Ding G F.J Fudan Univ (Nat Sci),2012; 51:184(李君翊,汪红,王溯,王慧颖,程萍,张振杰,丁桂甫.复旦学报(自然科学版),2012; 51:184) |
| [9] | Li Y S,Wang W.Acta Metall Sin,2010; 46:1098(黎业生,汪伟.金属学报,2010; 46:1098) |
| [10] | Wang F J,Qian Y Y,Ma X.Acta Metall Sin,2005; 41:775(王凤江,钱乙余,马鑫.金属学报,2005; 41:775) |
| [11] | Ma Y,Yao X H,Tian L H,Zhang X Y,Shu X F,Tang B.Acta MetallSin,2011; 47:321(马永,姚晓红,田林海,张翔宇,树学峰,唐宾.金属学报,2011; 47:321) |
| [12] | Dao M,Chollacoop N,Van Vliet K J,Venkatesh T A,Suresh S.Acta Mater,2001; 49:3899 |
| [13] | Tabor D.The Hardness of Metals.London:Oxford University Press,1951:120 |
| [14] | Choi Y,Lee H S,Kwon D.J Mater Res,2004; 19:3307 |
| [15] | Pethica J B,Oliver W C.Phys Scr,1987; 19:61 |
| [16] | Oliver W C,Pharr G M.J Mater Res,1992; 7:64 |
| [17] | Pharr G M,Oliver W C.J Mater Res,1992; 7:613 |
| [18] | Antunes J M,Femandes J V,Menezes L F,Chaparro B M.Acta Mater,2007; 55:69 |
| [19] | Lee J,Lee C,Kim B.MaterDes,2009; 30:3395 |
| [20] | Read D T,Cheng Y W,Geiss R.Microelectron Eng,2004; 75:63 |
| [21] | Xiang Y,Chen X,Vlassak J J.Mater Res Soc Symp Proc,2002;695:189 |
| [22] | http://www.matweb.com |
| [23] | Ranganathan N,Prasad K,Balasubramanian N,Pey K L.JMicromech Microeng,2008; 18:075018 |
| [24] | Shin H A S,Kim B J,Kim J H,Hwang S H,Budiman A S,Son H Y,Byun K Y,Tamura N,Kunz M,Kim D I K,Joo Y C.JElectron Mater,2012; 41:712 |
| [25] | Okoro C,Labie R,Vanstreels K,Franquet A,Gonzalez M,Vandevelde B,Beyne E,Vandepitte D,Verlinden B.JMater Sci,2011; 46:3868 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%