采用表面改性法制备了SiO 2负载的复合半导体材料NiO-V2O5-SiO2. 用BET、TPR、XRD、Raman、TEM、IR和UV-Vis DRS技术对固体材料的结构和光吸收性能进行了表征. 结果表明V2O 5在载体表面以微晶形式存在, 粒径约为10nm, NiO和V2O 5复合后部分形成了Ni 2+ --O--V 5+键联, 而且NiO和V2O 5在固体材料表面有相互修饰作用. NiO的加入有助于提高V2O 5在载体SiO 2表面的分散程度, 抑制V2O 5的聚合, 减小微晶尺寸, 而且可以增强固体材料的光吸收性能, 提高复合半导体对光能的利用率.
The supported coupled-semiconductor of NiO-V2O 5/SiO2 was prepared by a chemical modification method. BET, TPR, XRD, Raman, TEM, IR and UV-vis DRS techniques were used to characterize the structure and light adsorption ability of NiO-V2O 5/SiO 2. The results show that, V2O 5 exists on the surface of silica as crystallite with the partical size about 10nm, Ni 2+ --O--V 5+ bond forms on the surface of NiO-V2O 5/SiO2, and NiO and V2O 5 on the surface of support can act on each other. On the one hand, NiO can promote the dispersion of V2O 5 on the surface of silica, which effectively prevents V2O 5 from aggregation, diminishes the size of crystallite, moreover, NiO can expand the light absorption ability of solid material, advances its utilization to light energy.
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