采用超声喷雾热解法在单晶GaAs(100) 衬底上生长ZnO同质p-n结. 以醋酸锌水溶液为前驱体, 分别以醋酸铵和硝酸铟为氮(N)源和铟(In)源, 通过氮--铟(N-In)共掺杂沉积p型ZnO薄膜, 以未故意掺杂的ZnO薄膜做为n型层获得ZnO基同质p-n结. 采用热蒸发工艺在ZnO层和GaAs衬底上分别蒸镀Zn/Au和Au/Ge/Ni电极而获得发光二极管原型器件, 在室温下发现了该器件正向电流注入下的连续发光现象.
ZnO has recently become a very popular material due to its great potential for
optoelectronics applications. To realize practical application of short-wavelength optoelectronic devices (such as LEDs and LDs) based on ZnO materials, electroluminescence (EL) from ZnO p-n homojunction is pivotal. In this article, ZnO homojunction was grown on single-crystal GaAs (100) substrate by ultrasonic spray pyrolysis with Zn(CH3COO)2﹒2H2O as precursor solution. CH3COONH4 and In(NO3)3 aqueous solutions were chosen as the doping sources of nitrogen and indium respectively. The ZnO homojunction was comprised of N-In codoped p-type ZnO and unintentionally doped n-type ZnO film. Ohmic contact layers on n-type ZnO layer and GaAs substrate were formed by Zn/Au and Au/Ge/Ni electrode respectively. Moreover, light emission was observed under forward current injection at room temperature, the emission could be clearly seen by the naked eye in a darkened room. With the demonstrated success of electroluminescence from ZnO p-n homojunction at room temperature, the application of short-wavelength optoelectronic devices based on ZnO materials should be possible in the near future.
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