研究了V2O5掺杂BaTiO3-Y2O3-MgO系陶瓷的显微结构和介电性能. SEM显示V2O5会促进该体系晶粒生长, 降低陶瓷致密度. XRD显示V掺杂样品均为单一赝立方相, 其固溶度>1.0mol%. 研究表明, V离子能有效抑制掺杂离子Y、Mg向BaTiO3晶粒内扩散, 改变掺杂离子在晶粒中分布,
从而形成薄壳层的壳芯晶粒, 因此V能提高居里峰的强度并改善电容温度稳定性. 多价V离子在还原气氛中以+3、+4为主, 能增强瓷料的抗还原性, 提高绝缘电阻率(1013Ω·cm)、降低介电损耗(0.63%). 该体系掺杂0.1mol%V时, 介电常数达到2600, 满足X8R标准.
The microstructure and dielectric properties of V2O5-doped BaTiO3-Y2O3-MgO ternary system were studied. SEM shows that V ions can promote grain growth of BaTiO3 based ceramics, but decrease the density of sintered ceramics. XRD indicates that V-doped
samples have pseudocubic structure and the solubility limit of V is more than 1.0mol%. The results show that V can increase the intensity of Curie peak and improve the temperature stability of dielectric constant, because of the formation of core-shell-grains with thin shell layer, which is attributed to the fact that V ions can effectively inhibit the diffusion of Y and/or Mg ions into BaTO3 grains and change the distribution of doping ions in the grains. Moreover multivalent V ions can reinforce the nonreducibility of this system, and the insulation resistivity increases to 1013Ω·cm and dielectric loss decrease to 0.63% consequently. The high performance materials with dielectric constant of 2600 satisfying the X8R
requirement is achieved when 0.1mol% V is added.
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