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采用籽晶辅助化学气相传输法生长得到φ32mm ZnO单晶体. X射线衍射表明晶体沿c轴方向生长, 结晶质量较好: 中心部位摇摆曲线半高宽47arcsec, 边缘部分为78.4arcsec. 利用Raman谱、光致发光谱等研究了ZnO晶体退火前后的缺陷和光学性质, 表明经氧气氛退火后晶体缺陷明显减少, 晶体质量进一步提高.

ZnO single crystal with a diameter of 32mm, was grown by a seeded chemical vapor transport method. X-ray diffraction technique was used to evaluate the crystalline quality. The structure defects and optic properties of as-grown and annealed ZnO crystals were compared by Raman and photoluminescence measures. It is found that the growth direction is along c-axis and FWHM is 47arcsec and 78.4arcsec in the centre and at the edge of the crystal, respectively. Quality of the crystal is improved after annealing in oxygen ambience.

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