利用脉冲激光淀积的方法在Si衬底上生长出了$c$轴高度取向的ZnO和Zn0.9Mn0.1O薄膜. 光致发光结果显示了Mn的掺杂引起了薄膜的带边发射蓝移, 强度减弱, 紫光发射几乎消失, 但绿光发射增强. 利用X射线衍射, X射线吸收精细结构和X射线光电子能谱等实验技术对Mn掺杂的ZnO薄膜的结构及其对光学性质影响进行了研究. 结果表明: Mn掺入到ZnO薄膜中形成了Zn0.9Mn0.1O合金薄膜, Mn以+2价的价态存在, 这就导致了掺Mn以后的薄膜带隙变大, 在发光谱中表现为带边发射的蓝移. 同时由于掺入的Mn与薄膜中的填隙Zn反应, 导致薄膜的结晶性变差,薄膜中的填隙Zn减少, O空位增多, 引起带边发射和紫光发射减弱, 绿光发射增强.
Highly c-axis oriented ZnO and Zn0.9Mn0.1O thin films were fabricated on Si substrates by pulsed laser deposition. Photoluminescence results show that Mn atoms doping induces the blue-shift of UV emission. At the same time, the intensity of UV emission decreases, while green emission increases. X-ray diffraction, X-ray absorption fine structure and X-ray photoelectron spectroscopy were employed to characterize the influence of Mn-doping on properties of ZnO thin films. The results indicate that Zn0.9Mn0.1O alloy forms after Mn doping in ZnO. Mn atoms enter into the ZnO crystal lattice and substitute Zn atoms with Mn2+ state. As a result, the band gap of Zn0.9Mn0.1O increases, which is associated with the UV emission blue-shift. Furthermore, the reaction between the doped Mn and interstitial Zinc atoms(Zni) prompts the decay of samples' crystallinity. Thus, interstitial Zinc atoms(Zni) decrease and the oxygen vacancy (VO) increases, showing the intensity weakening of the UV and violet emission, and the increasing of green emission of the film samples.
参考文献
| [1] |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%