采用高真空反应蒸发法在未加热的p型Si(100)衬底上实现了非晶Er2O3高k栅介质薄膜的生长. 俄歇电子能谱证实薄膜组分符合化学剂量比. X射线衍射、反射式高能电子衍射和高分辨透射电子显微镜测量表明, 不但原位沉积的薄膜是非晶结构, 而且高真空700℃退火30min后样品仍保持了良好的非晶稳定性. 原子力显微镜检测显示高真空退火有利于改善薄膜的表面形貌. 退火后, Er2O3薄膜获得了平整的表面. 电容-电压测试得到薄膜的有效介电常数为12.6, EOT为1.4nm, 在1MV/cm时漏电流密度为8×10-4A/cm2. 这些特征表明非晶Er2O3薄膜是一种较好的高k栅介质候选材料.
High k dielectric Er2O3 were deposited on p-type Si (100) substrates by reactive evaporation using metallic Er source at room temperature in an oxygen atmosphere. The composition of the films is determined to be stoichiometric. X-ray diffraction, reflection high energy electron diffraction and high resolution transmission electron microscopy tests reveal
that the films are amorphous even after thermal annealing at 700℃. The films have very flat surface after high temperature annealing. The dielectric constant of Er2O3 films is 12.6, an effective oxide thickness of 1.4nm is achieved, with a low leakage current density of 8×10-4 A/cm2 at electric field of 1MV/cm after annealing. The obtained results indicate that the amorphous Er2O3 film is a promising candidate for high k gate dielectric in Si microelectronic devices.
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