利用直流反应磁控溅射在柔性衬底(聚乙烯对苯二酸脂, PET)上低温沉积了对可见光透明的低电阻率的ZnxCd1-xO薄膜, 并研究了Zn含量x对ZnxCd1-xO薄膜的结晶性能、电学性能及光学性能的影响. XRD分析结果表明, 当x<0.65时, 薄膜为CdO结构, 但x>0.65时, 薄膜为高度取向的ZnO结构. Hall效应测试显示, 当x≤0.5时, 薄膜的载流子浓度很高, 电阻率为10-3 Ω·cm的数量级; 迁移率随x增加先增大, 在x=0.5处达到极大值, 然后随x的增加而降低. 紫外可见透射谱表明, 掺Zn后的ZnxCd1-xO薄膜在整个可见光波段内的透过率远远高于纯CdO薄膜的透过率. 综合分析结果表明, x=0.5是低温制备的低阻、高透光性能薄膜的最佳Zn含量.
Low resistivity transparent conducting ZnxCd1-xO films were deposited on flexible Polyethylene Terephthalate(PET) substrates by DC magnetron sputtering. Structural, electrical, and optical properties of the films with different Zn concentrations were investigated. XRD results show that for x0.5, the structure of the film is in CdO phase, while for x>0.5, oriented ZnO phase is dominant. Hall results shows that the ZnxCd1-xO films has very high carrier concentration when x≤0.5, and the electrical resistivitiy of the films is at the order of 10-3Ω·cm. Carrier mobility shows a maximum value at x=0.5. The transmittance of the ZnxCd1-xO films in the visible range is much higher than that of pure CdO film. It’s concluded that x=0.5 is the optimal value at which low electrical resistive, high visible transmittance ZnxCd1-xO films can be deposited at low temperature on flexible substrates.
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