采用连续离子层吸附与反应(SILAR)方法, 在室温液相条件下(20～25℃)制备了沉积于玻璃衬底上的CuSCN半导体薄膜, 以X射线衍射、扫描电镜、光学透过谱考察了所得薄膜的晶体结构、微观表面断面形貌和光学性能, 探讨了影响CuSCN薄膜沉积的关键因素. 结果表明, 所得薄膜具有明显结晶性及沿c轴择优生长趋势, 表面致密、均匀, 分别由50～100nm的较大颗粒和20～30nm的小颗粒紧密堆聚而成; 薄膜在400～800nm波段的透过率为50%～70%, 光学禁带宽度为3.94eV. CuSCN薄膜的沉积过程受铜前驱液中S2O32-与Cu2+的摩尔比、衬底漂洗方式和生长温度等因素影响显著, 高络离子浓度、多次沉积反应后再进行衬底漂洗、以及室温生长条件有利于得到高质量的CuSCN薄膜.
CuSCN thin film was deposited on glass substrate from solutions at room temperature (20--25℃) by the successive ionic layer adsorption and reaction (SILAR) method. The crystalline structure, morphology, and optical properties of obtained film were characterized by X-ray diffraction, scanning electron microscope, and optical transmittance. The key parameters influencing the deposition of CuSCN on substrate were discussed briefly. The CuSCN film exhibits obvious crystallinity, preferential orientation along c-axis, and dense and uniform morphology. Two classes of CuSCN particles are observed, the larger particles in size of 50--100nm and the smaller ones in size of 20--30nm. The transmittance of the film at the band of 400--800nm is 50%--70%, and the optical band gap is estimated to be 3.94eV. Mechanism analysis indicates that the growth of CuSCN film is affected significantly by three factors, namely, the molar ratio of S2O32- to Cu2+ in the copper precursor, the substrate rinsing mode, and the growth temperature. The relatively high concentration of complex ions, the substrate-rinsing after multiple reaction cycles, and the room-temperature deposition are beneficial to the growth of high quality CuSCN film.
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