为研究磁过滤阴极弧制备的四面体非晶碳(tetrahedral amorphous carbon, ta-C)膜在自然环境中使用的热稳定性, 将ta-C膜在空气中退火3h, 退火温度分别为200、400和500℃. 用XPS和Raman谱对膜的微观结构进行表征. 结果表明, 在400及400℃以下退火, XPS谱C1s峰和Raman谱都没有明显变化. 当退火温度为500℃时, C1s峰峰形仍然没有变化; Raman峰ID/I G增大, G峰峰位未变, 峰的对称性变好. 分析显示膜中石墨颗粒长大, 但没有发生石墨化. 说明磁过滤阴极弧制备的ta-C膜因不含氢和结构致密而表现出良好的热稳定性. 另外, 在退火温度为500℃时, 样品边缘已经氧化挥发.
In order to investigate the thermal stability of the tetrahedral amorphous carbon(ta-C) films fabricated by filtered cathodic arc deposition technique, ta-C films were annealed in ambient air for 3h. The annealing temperature was 200℃, 400℃ and
500℃, respectively. XPS and Raman spectroscope were employed to characterize the changes of the microstructure of the films. The results show that the XPS C1s peaks and the Raman peaks of the samples annealed at 400℃ or below change little. When the annealing temperature
is 500℃, the shape of the XPS C1s peak doesn’t change too; the Raman ID/IG increases, the G-peak position doesn’t change and
the shape of Raman peak becomes more symmetry. This reveals that the sizes of the graphite clusters in the films increase and no obvious graphitization occurs during annealing process. All these indicate that the ta-C film fabricated by filtered cathodic vacuum arc technique has excellent thermal stability due to its hydrogen free and dense structure. Besides, parts of the films along the edge of the samples is evaporated by oxidation when the annealing temperature is up to 500℃.
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