采用反应射频磁控溅射技术, 在非晶石英衬底上不同温度下制备了纳米多晶Gd掺杂CeO2(简称GDC)氧离子导体电解质薄膜, 采用X射线衍射仪、原子力显微镜对薄膜物相、晶粒大小、生长形貌进行了表征, 利用交流阻抗谱仪测试了GDC薄膜的电学性能. 结果表明, GDC薄膜生长取向随沉积温度而变化: 300～400℃时为强(111)织构生长, 而500～600℃时薄膜趋于无规则生长; 随着沉积温度的升高, 薄膜的生长形貌由同一取向的大棱形生长岛转变为密集球形小生长岛; GDC多晶薄膜的电导活化能约为1.3eV, 接近于晶界电导活化能值, 说明GDC交流阻抗主要源于晶界的贡献; 晶界空间电荷效应导致GDC薄膜电导率随晶粒尺寸而变化, 晶粒尺寸越小, 电导率越大.
Nanocrystalline Gd-doped CeO2 (GDC) ion conductor electrolyte thin films were synthesized by reactive magnetron sputtering on amorphous quartz substrates at different temperatures. The thin films were characterized by X-Ray diffraction, atomic force microscope and alternating current impedance analysis. The results show that the growth orientation of GDC films varies with the deposition temperature from strong (111) texture at 300--400℃ to random growth at 500--600℃. Growth morphologies of GDC films also transform from well-oriented big prismatic growth islands to dense small round ones with increase of the deposition temperature. The activation energy (～1.3eV) of GDC films closed to the reported value for the grain boundary conductivity indicates that grain boundary resistance dominates the electrical properties of GDC films. Conductivity varies with grain size of GDC films due to the grain boundary space charge effect, the smaller the grain size, the higher the conductivity and vice versa.
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