采用射频磁控溅射法在玻璃衬底上制备氧化铟薄膜, 通过测试原子力显微镜、X射线衍射、X射线光电子谱、紫外可见分光光度计以及霍尔效应, 研究了氧化铟薄膜的结构和光、电特性. 实验发现, 氧化铟薄膜表面粗糙度随着生长温度的升高而增大. X射线衍射结果表明薄膜为立方结构的多晶体, 并且随着生长温度的升高, 可以看到氧化铟薄膜的晶粒变大以及半高宽减小, 这也说明结晶质量的改善. 在可见光范围的透射率超过90%. 同时, 在氩气氛围下制备的薄膜迁移率最大, 其电阻率、霍尔迁移率和电子浓度分别达到了0.31Ω·cm、9.69cm2/(V·s)和1
×1018cm-3. 退火处理可以改善氩氧氛围下制备的薄膜的电学性能.
In2O3 thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering. The structural, electrical and optical characteristics of In2O3 films were investigated by atomic force microscope (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscope, UV-Visible spectrophotometer and Hall effect measurements. It is found that the surface roughness of In2O3 thin film increases with growth temperature increasing. The X-ray diffraction (XRD) studies show that the films are polycrystalline and retain a cubic structure. As the growth temperature rises, the grain size of In2O3 thin film increases and the FWHM decreases, namely, the crystalline quality of the films is improved. The optical transmittance of the thin films exceeds 90%. The film grown in Ar atmosphere shows highest mobility with resistivity of 0.31Ω·cm, mobility of 9.69cm2/(V·s), and electron concentration of about 1×1018cm-3. And the annealing can improve the electrical properties of the film grown in the Ar+O2 atmosphere.
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