N掺杂对Co-ZnO薄膜电学和磁学性能的影响

无机材料学报, 2010, 25(7): 711-716. doi: 10.3724/SP.J.1077.2010.00711

N掺杂对Co-ZnO薄膜电学和磁学性能的影响

王雪涛 ^1, , 朱丽萍 ^2, , 叶志高 ^3, , 叶志镇 ^4, , 赵炳辉 ^5,

1.浙江大学,材料科学与工程学系硅材料国家重点实验室,杭州,310027

2.浙江大学,材料科学与工程学系硅材料国家重点实验室,杭州,310027

3.浙江大学,材料科学与工程学系硅材料国家重点实验室,杭州,310027

4.浙江大学,材料科学与工程学系硅材料国家重点实验室,杭州,310027

5.浙江大学,材料科学与工程学系硅材料国家重点实验室,杭州,310027

基金项目: 浙江省自然科学基金(Y407183) 国家自然科学基金(50772099)

关键词： PLD , Co-N共掺 , ZnO薄膜 , 磁性

Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films

采用脉冲激光沉积(PLD)法通过电离活化方式在石英和Si(100)衬底上制备了Co-N共掺ZnO薄膜,研究了N掺杂对Co-ZnO薄膜电学和磁学性能的影响.实验观察到700℃、N2O压强为15Pa时生长的Co-N共掺ZnO薄膜显示室温磁滞回线.采用XRD、SEM、XPS、霍尔测试和SQUID等手段对样品进行了测试,结果表明,所得薄膜样品具有高度的c轴择优取向,XRD图谱中并没有发现Co、N的相关分相,Co、N原子分别以替代位形式Cozn、No存在于薄膜中.霍尔测试和SQUID测试表明,Co-N共掺ZnO薄膜旱P型,具有室温磁滞效应.与Co掺杂ZnO薄膜相比,载流子浓度降低,同时,饱和磁化强度和矫顽力有很大提高,可见,N的掺入改变了Co掺杂ZnO稀磁半导体薄膜的导电类型,并增强了磁性.

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