采用固相法(成型压力～12MPa)获得了Nb改性的Bi4Ti3O12(BIT+xmol%Nb2O5)层状压电陶瓷.研究发现随着Nb2O5含量的增加,a-b面取向的晶粒逐渐增多,晶粒尺寸愈细化与均匀.Nb2O5的引入明显降低了BIT系列陶瓷的导电率和介电损耗,提高了陶瓷的相对密度,压电与机电性能.适量Nb2O5(x＝4.00)掺杂时,陶瓷的电导率(～10-13S/cm)比纯 BIT的降低了2个数量级,且该陶瓷的相对密度ρ＝98.7%,tanδ＝0.23%,d33=18pC/N,Qm=2804,kp=8.1%,kt=i8.6%,Np=2227Hz·m,Nt=2025Hz·m.BIT+xmol%Nb2O5(x=4.00)陶瓷在600℃经退极化处理后,其d33基本保持不变(～17pC/N),表明该材料在高温器件领域具有良好的应用前景.
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