采用水基凝胶注模成型工艺制备了0.9Al2O3-0.1TiO2陶瓷. 研究了烧结后的0.9Al2O3-0.1TiO2陶瓷的微结构、相组成以及微波介电性能. 通过采用合适的预烧温度(1200℃)和连续、缓慢的降温工艺来退火, 成功消除了Al2TiO5第二相. 和传统干压法相比, 用水基凝胶注模成型工艺制备的0.9Al2O3-0.1TiO2陶瓷具有较大的晶粒, 较少的气孔和更加均匀的微结构. 因此, 用水基凝胶注模成型工艺制备的0.9Al2O3-0.1TiO2陶瓷拥有更好的微波介电性能: er = 10.71, Q x f =20421GHz, tf = 1.3´10-6/℃,而用传统干压法制备的0.9Al2O3-0.1TiO2陶瓷的微波介电性能为er =10.89, Q x f =11938GHz, tf = 1.4 x 10-6/℃.
Theaqueous gelcasting was used to prepare 0.9Al2O3-0.1TiO2ceramics. The microstructures, phase compositions and microwave dielectricproperties of sintered 0.9Al2O3-0.1TiO2ceramics were investigated. With the help of proper calcination temperature(1200℃)and continuous and slow cooling process as annealing treatment, the Al2TiO5secondary phase was successfully eliminated. Compared with conventional drypressing method, bigger grains, less pores and more uniform microstructures areobserved in the 0.9Al2O3-0.1TiO2 ceramicsprepared by aqueous gelcasting. Therefore, much better microwave dielectricproperties are obtained in the ceramics prepared by aqueous gelcasting with er = 10.71, Q x f = 20421GHz, tf = 1.3 x 10-6/℃, whereas that of ceramics preparedby dry pressing are er = 10.89, Q x f = 11938GHz, tf = 1.4 x 10-6/℃.
参考文献
[1] | Alford N M, Penn S J. Sintered alumina with low dielectric loss. J. Appl. Phys., 1996, 80(10): 5895-5898.[2] Templeton A, Wang X, Penn S J, et al. Microwave dielectric loss of titanium oxide. J. Am. Ceram. Soc., 2000, 83(1): 95-100.[3] Ohishi Y, Miyauchi Y, Ohsato H, et al. Controlled temperature coefficient of resonant frequency of Al2O3-TiO2 ceramics by annealing treatment. Jpn. J. Appl. Phys., 2004, 43(6A): 749-751.[4] Miyauchi Y, Ohishi Y, Miyake S, et al. Improvement of the dielectric properties of rutile-doped Al2O3 ceramics by annealing treatment. J. Eur. Ceram. Soc., 2006, 26(10/11): 2093-2096.[5] Omatete O O, Janney M A, Strehlow R A. Gelcasting-a new ceramic forming process. Am. Ceram. Soc. Bull., 1991, 70(10): 1641-1649.[6] Franks G V, Velamakanni B V, Lange F F. Vibraforming and in situ flocculation of consolidated, coagulated, alumina slurried. J. Am. Ceram. Soc., 1995, 78(5): 1324-1328.[7] Xie Z P, Cheng Y B, Huang Y. Formation of silicon nitride bonded silicon carbide by aqueous gelcasting. Mater. Sci. Eng. A, 2003, 349(1/2): 20-28.[8] Wang L Y, Tang G Y, Xu Z K. Preparation and electrical properties of multilayer ZnO varistors with water-based tape casting. Ceram. Int., 2009, 35(1): 487-492.[9] Hakki B W, Coleman P D. A dielectric resonator method of measuring inductive capacities in the millimeter range. IRE Trans. MTT, 1960, 8(4): 402-410.[10] Zheng Y, Zhao X, Lei W, et al. Effects of Bi2O3 addition on the microstructures and microwave dielectric characteristics of Ba6-3x(Sm0.2Nd0.8)8+2xTi18O54(x=2/3) ceramics. Mater. Lett., 2006, 60(4): 459-463.[11] Huang C L, Hsu C S, Lin R J. Improved high-Q microwave dielectric resonator using ZnO and WO3-doped Zr0.8Sn0.2TiO4 ceramics. Mater. Res. Bull., 2001, 36(11): 1985-1993. |
- 下载量()
- 访问量()
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%