采用脉冲激光沉积法制备了CuAlO2薄膜.在沉积激光能量100~180mJ范围内原位沉积的薄膜并在N2气氛下900℃异位退火1h处理后,所有薄膜均为高度c轴取向的单相CuAlO2薄膜,晶粒尺寸~49nm.随着沉积激光能量的增大,薄膜厚度增加,表面颗粒尺寸明显增大,在可见光区的平均透射率下降.室温光致发光谱发现,CuAlO2薄膜在350nm附近有一个自由激子复合发光峰,说明在CuAlO2宽带隙半导体中存在直接带间跃迁,这对于该材料在光电子领域如发光二极管的应用具有重要意义.
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