报道了A:Al2O3(A=Cr, Fe, Ni)晶体光学浮区法生长工艺, 研究了旋转速率、生长速率对晶体质量的影响, 制备出了直径6~8 mm、长度为60~80 mm的A:Al2O3晶体. A:Al2O3晶体的生长方向为<001>方向, X射线双晶摇摆曲线表明A:Al2O3晶体具有良好的晶体质量. 通过X射线衍射、扫描电镜、偏光显微镜对晶体中的生长缺陷进行了研究, 结果表明, A:Al2O3晶体的主要缺陷为小角度晶界、包裹体和溶质尾迹. 研究了A:Al2O3晶体的光谱性能, 并对A:Al2O3晶体的介电性能进行了测量, 室温下1000 kHz时A:Al2O3晶体表现出较高的介电系数er(12.1~15.7)和较小的介电损耗tand(0.0020~0.0002).
High quality Cr-, Fe- and Ni- doped Al2O3 (A:Al2O3) single crystals with a diameter of 6?8 mm and a length of 60-80 mm were successfully produced by the floating zone technique. The relationship between crystal quality and growth conditions was discussed, and the optimum preparation parameter was obtained. The crystals growth direction was determined as <001> by X-ray diffraction. The X-ray rocking curve of the crystal had a FWMH of 0.089o, proving excellent quality of the crystal. The as-grown crystals were characterized by polarized optical microscope and scanning electron microscope, as well as X-ray diffraction. The observed primary crystal defects were sub-angle grain boundaries, inclusions and solute trails. The absorption spectra properties and dielectric constant measurements of A:Al2O3 crystals and fluorescence spectra for Cr:Al2O3 crystals were investigated. In view of the fact that grown A:Al2O3 crystals show good quality, a respectively high dielectric constant er (12.1-15.7), low dielectric loss tan? (0.0020?0.0002), and favorable thermal stability suggests their utilization as laser matrix, dielectric material for microelectronics and substrate material.
参考文献
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| [2] | Song C, Hang Y, Xia C, et al. Characteristics of large-sized ruby crystal grown by temperature gradient technique. Opt. Mater., 2005, 27(4): 699-703.[2] Moncorgé |
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