研究了AgInSbTe相变薄膜作为一种新的热刻蚀材料的腐蚀特性。采用射频磁控溅射的方法在室温下制备了非晶态AgInSbTe薄膜, 经真空加热退火晶化. 以氢氧化钠溶液作为腐蚀剂, 研究了退火温度、腐蚀剂浓度、腐蚀时间对晶态、非晶态 AgInSbTe薄膜腐蚀特性的影响. 结果表明: 以非晶态形式存在的沉积态AgInSbTe薄膜在0.001 mol/L氢氧化钠溶液中腐蚀速度小于0.04 nm/min, 退火晶化后, 薄膜的腐蚀速度大幅度提高, 晶态和非晶态薄膜的腐蚀选择比随退火温度的升高而增大. 当腐蚀时间为20 min时, 经300℃真空退火的晶态AgInSbTe薄膜比相应非晶态的腐蚀速度高45倍以上. 腐蚀后薄膜表面质量良好(粗糙度＜1 nm, 10 μm×10 μm区域). 并对AgInSbTe相变薄膜的腐蚀机理进行了讨论.
The etching characteristics of the AgInSbTe phase change film as a new thermal lithography material were studied. The amorphous AgInSbTe film was deposited by using radio frequency magnetron sputtering method at room temperature, and then crystallized by vacuum-annealing. Using sodium hydroxide aqueous solution as etchant, influences of annealing temperature, etchant concentration and etching time on etching properties of the amorphous and crystalline AgInSbTe films were investigated. Experimental results indicate that the etching rate of the amorphous AgInSbTe film is lower than 0.04 nm/s in 0.001 mol/L sodium hydroxide solution. After vacuum-annealing, the etching rate of the film increases markedly and the etching selectivity between the crystalline and amorphous films increases with the increase of the annealing temperature. At the etching time of 20 min, the etching rate of the crystalline AgInSbTe film annealed at 300℃ is 45 times higher than that of the amorphous film. The surface quality of the AgInSbTe film after etching is good, and the surface roughness is less than 1nm in the area of 10 μm×10 μm. The wet-etching mechanism of the AgInSbTe film in sodium hydroxide solution is discussed.
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