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为了降低第二代高温超导涂层导体的制备成本,采用电化学法(ED),在双轴织构的Ni-5at%W (Ni-5W)金属基带上分别成功制备出了具有较好c轴取向的La2Zr2O7 (LZO)和Gd2Zr2O7 (GZO)缓冲层.通过与磁控溅射方法(MS)相结合,制备出MS-CeO2/ED-RE2Zr2O7双层结构,用以取代完全用磁控溅射方法(MS)制备的多层缓冲层结构.电化学法得到的60 nm LZO缓冲层的面内和面外织构半高宽分别为7.2°和6.8°,同样厚度的GZO缓冲层的面内和面外半高宽分别为6.7°和5.8°.之后用脉冲激光沉积(PLD)在ED-LZO/Ni-5W,ED-GZO/Ni-5W,MS-CeO2/ED-LZO/Ni-5W三种结构的缓冲层上分别制备出具有超导性能的YBa2Cu3O7-δ (YBCO)超导层.

参考文献

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