以F掺杂透明导电玻璃(FTO)为基底,利用一步电化学沉积法制备了Cu(In1-x,Gax)Se2(CIGS)薄膜,系统地研究了电解液pH值对CIGS薄膜的化学组分、结构及其光电性能的影响.结果显示通过改变电解液pH值可以有效调控薄膜中In和Ga的化学计量比.X射线衍射(XRD)分析和扫描电子显微镜(SEM)结果表明,pH值为2.0时制备的CIGS薄膜结晶性较好,颗粒尺寸分布均匀.并且利用表面光伏技术研究了不同化学计量比对CIGS薄膜中光电荷动力学过程的影响,结果表明n(Ga)/n(In+Ga)约为0.3时,CIGS薄膜的光电性能最好.
参考文献
| [1] | Jackson P,Hariskos D,Lotter E,et al.New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20％.Prog.Photovolt:Res.Appl.,2011,19(7):894-897. |
| [2] | Antonio L,Steven H.Handbook of Photovoltaic Science and Engineering,2nd.San Francisco:Wiley,2011:546-599. |
| [3] | Bhattacharya R N,Oh M K,Kim Y.CIGS-based solar cells prepared from electrodeposited precursor films.Sol.Energ.Mat.Sol.C,2012,98:198-202. |
| [4] | Niki S,Contreras M,Repins I,et al.CIGS absorbers and processes.Prog.Photovolt:Res.Appl.,2010,18(6):453-466. |
| [5] | Repins I,Contreras M A,Egaas B,et al.19.9％-efficient ZnO/CdS/CulnGaSe2 solar cell with 81.2％ fill factor.Prog.Photovolt:Res.Appl.2008,16:235-239. |
| [6] | ZHANG Li,SUN Yun,HE Qing,et al.Three-step co-evaporation process of absorbing layer of Cu(In,Ga)Se2 integrated battery.Acta Energ.Sol.Sin.,2006,27(9):895-899. |
| [7] | Kaelin M,Rudmann D,Kurdesau F,et al.CIS and CIGS layers from selenized nanoparticle precursors.Thin Solid Films,2003,431-432:58-52. |
| [8] | Kapur V K,Bansal A,Le P,et al.Non-vacuum processing of CuIn1-xGaxSe2 solar cells on rigid and flexible substrates using nanoparticle precursor inks.Thin Solid Films,2003,431-432:53-57. |
| [9] | Xia D L,Zhao X J,Li J Z.Influence of Na-citrate's concentration on Cu(In,Ga)Se2 thin films by electrodeposition.J.Synth.Cryst.,2005,34(4):704-708. |
| [10] | Calixto M E,Sebastian P J,Bhattacharya R N,et al.Compositional and optoelectronic properties of CIS and CIGS thin films formed by electrodeposition.Mat.Sol.C,1999,59(1/2):75-84. |
| [11] | Ganchev M,Kois J,Kaelin M,et al.Preparation of Cu(In,Ga)Se2 layers by selenization of electrodeposited Cu-In-Ga precursors.Thin Solid Films,2006,511-512:325-327. |
| [12] | AO Jian-Ping,SUN Guo-Zhong,YAN Li,et al.The characteristics of one-step electrochemical deposition of Cu(In1-x,Gax)Se2 thin films.Acta Phys.Chim.Sin.,2008,24(6):1073-1079. |
| [13] | 龙飞.CIGS薄膜太阳电池材料的材料学特征及光伏性能.武汉:武汉理工大学博士论文,2009. |
| [14] | Kwak W C,Han S H,Kim T G,et al.Electrodeposition of Cu(In,Ga)Se2 crystals on high-density CdS nanowire arrays for photovoltaic applications.Cryst.Growth Des.,2010,10(12):5297-5301. |
| [15] | WANG Xin-Chun,WANG Guang-Jun,PANG Shan,et al.PH value on composition,structure and optical and electrical properties of CulnSe2 films by electrodeposition.Chin.J.Inorg.Chem.,2011,27(12):2437-2442. |
| [16] | Bhattachary R N,Fernandez A M.Culn1-xGaxSe2-based photovoltaic cells from electrodeposited precursor films.Sol.Energ.Mat.Sol.C,2003,76:331-337. |
| [17] | WANG Xin-Chun,HU Bin-Bin,WANG Guang-Jun,et al.Using alcohol as solvent to prepare CIGS films by electrodeposition.Acta Phys.-Chim.Sin.,2011,27(12):2826-2830. |
| [18] | Long F,Wang W M,Du J J,et al.CIS(CIGS) thin films prepared for solar cells by one-step electrodeposition in alcohol solution.Phys.:Conf Ser.,2009,152:012074-012078. |
| [19] | Kois J,Ganchev M,Kaelin M,et al.Electrodeposition of Cu-In-Ga thin metal films for Cu(In,Ga)Se2 based solar cells.Thin Solid Films,2008,516(18):5948-5952. |
| [20] | Gabor A M,Tuttle J R,Albin D S,et al.High-efficiency CulnxGa1-xSe2 solar cells made from (Inx,Ga1-x)2 Se3.Appl.Phys.Lett.,1994,65(2):198-200. |
| [21] | Hermann A M,Mansour M,Badri V,et al.Deposition of smooth Cu(In,Ga)Se2 films from binary multilayers.Thin Solid Films,2000,361-362:74-78. |
| [22] | Seto J Y W.The electrical properties of polycrystalline silicon films.J.Appl.Phys.,1975,46(12):5247-5254. |
| [23] | TANG Xue-Jiao,CHOU Jing-Yao,HAN Chang-Xiu,et al.Experimental study on the new technology for electroplating copper without cyanide.Nat.Univ.Nankaiensis.,2006,39(6):37-40. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%