采用双靶共溅法制备了铜掺杂的碲化铋锑热电薄膜,铜与碲化铋锑共溅的方法有利于形成沿c轴方向择优生长的碲化铋锑薄膜.结果表明,铜原子均匀的掺杂在碲化铋锑薄膜材料中.由于铜原子有利于提高载流子迁移率,薄膜材料的电导率随着铜掺杂比例的提高得到了极大的提升.当铜靶的溅射功率为20W时,可以得到最高的电导率,同时功率因子的最佳值可提升到20 μW/(cm·K2).
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