用磁控溅射法制备了被钉扎层为反铁磁(SAF)结构(CoFe/Ru/CoFe)的IrMn基顶钉扎自旋阀材料,分别采用HRTEM、AFM、XPS对材料的结构和成分进行表征.首先,制备的自旋阀材料分别在200℃、245℃、255℃、265℃的真空条件(＜10-5Pa)下退火4h,发现经265℃退火,自旋阀材料会发生明显的层间扩散,从而引起磁电阻率的降低.在选择合适退火温度(245℃)的基础上,研究了退火磁场对自旋阀材料磁电阻率的影响.在245℃的真空环境下,沿着材料的钉扎方向分别施加大小为80、160、240、400、560 kA/m的磁场退火4h.实验发现经过80和160 kA/m的磁场退火后,材料的磁电阻率由退火前的8.80％分别下降到5.87％和6.31％;经240 kA/m的磁场退火后材料的磁电阻率变为7.91％;经400 kA/m的磁场退火后磁电阻率增大到9.89％;经560 kA/m的磁场退火后磁电阻率进一步增大到10.79％,比退火前增加了22.6％.
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