采用等离子体增强化学气相沉积法(PECVD)制备了多孔SiO2薄膜,系统地研究了不同浓度磷酸处理对多孔SiO2薄膜的质子导电特性、双电层电容和以此多孔SiO2薄膜为栅介质的铟锌氧(IZO)双电层薄膜晶体管性能的影响.结果表明:多孔SiO2薄膜的质子电导率和双电层电容随磷酸浓度升高而增大,60％浓度磷酸处理后多孔SiO2薄膜质子电导率和双电层电容分别达到1.51×10-4 S/cm和6.33 μF/cm2.随磷酸浓度升高,双电层薄膜晶体管的工作电压降低,并且,电流开关比也变大.其中60％浓度磷酸处理后器件工作电压为1.2 V,迁移率为20cm2/(V·s),电流开关比为4×106.这种双电层薄膜晶体管有望应用在化学和生物传感等领域.
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