以 Si 粉、Al 粉和 Al2O3粉为原料压制成条样,在1650~1850 K 氮气和埋 Si3N4颗粒气氛下分别合成了β-SiAlON 晶须、带状和柱状晶,并系统研究了一维β-SiAlON 材料可控合成条件,进而结合热力学分析了一维β-SiAlON材料的生长机制。结果表明：以Si粉、Al粉和Al2O3为原料,在氮气(纯度99.9%)和埋Si3N4颗粒气氛下在1650~1850 K保温6 h,可以合成不同形貌的一维β-SiAlON材料。生长温度是一维β-SiAlON材料形貌控制的关键因素。生长温度为1650 K时,合成了β-SiAlON晶须,晶须直径200~400 nm,长径比100~1000；生长温度在1700~1800 K时,可以合成β-SiAlON带状晶体,厚度为200 nm,宽度为1~4μm,长宽比在10~20之间；生长温度升高至1800 K时,出现大量柱状晶体。结合晶须显微结构形貌和热力学分析,β-SiAlON晶须的生长机制为气-固(VS)生长机制。
β-SiAlON whiskers, belts and rods were prepared at 1650-1850 K in N2 atmosphere, respectively, by using Si, Al and Al2O3 powders as raw materials which were pressed into cuboid and burying in Si3N4 grains. The effects of growth conditions on the controllable synthesis of one-dimensionalβ-SiAlON preparation were investigated in detail, and their growth mechanisms were explored according to the thermodynamic calculations. The results showed that one-dimensional β-SiAlON could be controllably synthesized only by adjusting sintering temperatures. Specifically,β-SiAlON whiskers with 200-400 nm in diameter and 100-1000 in aspect ratio could be obtained at 1650 K. Increas-ing growth temperature from 1700 K to 1800 K,β-SiAlON belts with thickness of about 200 nm, width of 1-4μm and length-width ratio in the range of 10-20, were produced. Further increasing temperature to 1850 K,β-Sialon rods were synthesized accordingly. Vapor-solid (VS) growth mechanism was put forward to elucidate the growth of one-dimensionalβ-SiAlON based on their thermodynamic calculations and microstructures.
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