结合光刻工艺和金属援助硅化学刻蚀法成功地制备了图形化的硅纳米线阵列场发射阴极,研究了其场发射性能.扫描电子显微镜照片显示,嵌入在硅衬底的硅纳米线阵列为垂直取向,形成图形化.场发射测试与分析表明,该阴极能够有效实现场电子发射,并且有利于获得图形化、低发散角的电子束.本研究提供了一种在硅基底上简单、有效地选域制备图形化硅纳米线阵列场发射阴极的途径,可潜在用于构筑各种真空微电子器件.
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