利用等离子化学气相沉积法连续制备SiNx∶H和a-Si∶H薄膜.通过电学、光学、力学测试研究了SiNx∶H薄膜沉积条件对其界面性能的影响.研究结果表明,过度的富硅化将显著增大体系的界面态,严重影响器件的TFT特性.当SiH4和NH3气体流量比值为7∶15时,开关比(Ion/Ioff)可达3.24×10 7.适当增加功率同样可以提高Ion,但高于31.5 W/cm2后,只会严重地增大薄膜的应力.优化SiNx∶H的沉积参数,开关比可以提高5.5倍.
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