LED微阵列器件具有体积小、分辨率高、寿命长及耗能低等突出特点.出光效率是该器件的一项重要参数,文中对以AlGaInP外延片为基片的LED微阵列器件的出光效率进行了理论及实验研究.器件的像素周期设计为100 μm×100μm,发光单元间的上隔离沟槽宽度为20 μm、深度为25 μm,将在600～650 nm波段具有高反射率的均匀掺单晶硅纳米颗粒的聚酰亚胺作为复合材料来填充上隔离沟槽,将侧面出射的光反射到上表面,实现了相邻两个发光单元之间的光学和电学隔离.分析计算表明,通过填充硅纳米颗粒/聚酰亚胺复合膜材料,使每个发光单元侧面出射光的16.695％反射回窗口层,提高了出光效率.这项研究将有助于提高LED微阵列器件的出光效率.
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