材料期刊网

为了分析 PDP 列驱动芯片的能量恢复效率，提出了2种分析模型.DPLD(double-channel p-type lateral extended drain MOS)管是列驱动芯片中能量恢复电路的核心元器件.CRC(电容-电阻-电容)等效电路模型适用于漏电流能力较弱的 DPLD 管；VCCS(压控电流源)模型适用于漏电流能力较强的 DPLD 管；测试结果显示 CRC 和 VCCS 模型都具备较高的精度，模型误差分别是2.26％和4.04％.CRC 模型揭示了影响列驱动芯片能量恢复效率的因素有3个，分别是：充电时间、沟道电阻、负载电容.2种模型分析的对比结果表明，沟道电阻对列驱动芯片的能量恢复效率影响很大，使用较小沟道电阻的 DPLD 管可以显著提高 PDP 列驱动芯片的能量恢复效率.CRC 和 VCCS 模型可用于精确预测列驱动芯片的能量恢复效率.

Two analytical models are proposed to analyze the energy recovery efficiency of PDP data driver IC.DPLD (double-channel p-type lateral extended drain MOS)transistor is the key device of energy recovery circuit of data driver IC.CRC (Capacitor Resistor and Capacitor)equivalent circuit model is suitable for DPLD transistor which has poor drain current capacity.VCCS (Voltage Con-trolled Current Source)model is suitable for DPLD transistor which has strong drain current capacity. The test results reveal that both CRC and VCCS models have high precision,the model errors are 2.26% and 4.04%.CRC model reveals that the energy recovery efficiency of data driver IC is influ-enced by three factors,which are the charge time,channel resistor and load capacitor.The compared results of two models show that channel resistor has great influence on energy recovery efficiency of data driver IC.The energy recovery efficiency of PDP data driver IC can be improved significantly by using DPLD transistor which has smaller channel resistor.The proposed CRC and VCCS models can be used to predict the energy recovery efficiency accurately.