主要分析了黑矩阵残留程度与 SiNx、SiON、SiOx 等基底表面亲水特性的关系,研究了等离子体处理对基底表面亲水特性以及黑矩阵残留的影响。首先,通过原子力显微镜和扫描电子显微镜对黑矩阵在不同基底表面的残留颗粒大小、表面粗糙度进行了测试。然后,使用接触角测试仪对不同基底表面的亲水特性进行了表征,分析了表面亲水特性和黑矩阵残留程度的关系。最后,研究了等离子体处理条件对基底表面亲水特性的影响,提出了采用 O2/He 等离子体对基底表面进行改性来解决黑矩阵的残留问题。实验结果表明：基底表面的水接触角越小、亲水性越强,黑矩阵在基底表面的残留越少；O2/He 等离子体表面处理使基底表面的水接触角从17°降低到3°,增强了基底表面的亲水特性,并且黑矩阵工艺之后基底表面的粗糙度从3.06 nm 降低到0.69 nm,消除了黑矩阵的残留。
The effect of plasma surface treatment on black matrix (BM)residue and substrate hydro-philicity is investigated in order to improve display performance of TFT-LCD with BM on array (BOA)structure.The size of remained BM particles and surface roughness are characterized by atom force microscope (AFM)and scanning electron microscope (SEM).Water contact angle and hydrophi-licity of substrate are measured by the contact angle instrument,which gives the correlation between hydrophilicity and BM residue.Finally,the effect of O2 and He plasma surface treatment on BM resi-due is investigated.Experimental results indicate that the smaller water contact angle means the better hydrophilic and the less BM residue.After treatment with O2 and He plasma,the water contact angle of substrate is decreased from 17°to 3°and the surface roughness is decreased from 3.06 nm to 0.69 nm after BM process.AFM morphology images show that BM residue is completely eliminated from the substrate.
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