本文采用一种结构为Ag/MoO3/Ag的金属/氧化物/金属(M1/O/M2)叠层替代ITO作为OLED器件的阳极,研究Ag/MoO3/Ag叠层结构变化对于OLED器件电极透过率、亮度、光谱等性能的影响.实验采用真空蒸镀方法制备了一系列器件,器件结构为Ag/MoO3/Ag/MoO3 (10 nm)/NPB(40 nm)/Alq3 (60 nm)/LiF(1 nm)/Al(150 nm).对比器件的电压-电流密度、电压-亮度、光谱特性等数据,表明Ag/MoO3/Ag的结构为20/20/10(nm)时,器件性能较好.在驱动电压为11V时,其亮度达到18 421 cd/m2,电流效率为2.45 cd/A;且因器件中存在微腔效应,其EL光谱蓝移,半高宽变窄.但考虑到530 nm处其电极透过率仅为17%,所以经换算该器件实际发光亮度比ITO电极器件更高.该Ag/MoO3/Ag叠层阳极制作相对简单,经优化后在顶发射和柔性OLED器件方面将具有一定的应用前景.
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