为了适应大尺寸高分辨率显示的技术需求,研究并开发用于非晶铟镓锌氧(a-IGZO)薄膜晶体管(TFT)阵列的低电阻电极非常关键.本文采用磁控溅射制备的金属银为源漏电极,设计并制作了底栅结构的a-IGZO TFT器件.实验发现,具有单层银源漏电极的器件电学特性较差,这是因为银与a-IGZO之间不能形成良好的欧姆接触.另一方面,通过增加钛中间层而形成的Ag/Ti电极在保持低电阻的同时能够有效阻止银原子扩散并与a-IGZO形成较好的接触状态.最终制备的以Ag/Ti为源漏电极的a-IGZO TFT具有明显改善的电学特性,场效应迁移率为1.73 cm2/V·s,亚阈值摆幅2.8 V/(°),开关比为2×107,由此证明了磁控溅射制备的银电极具有应用于非晶氧化物薄膜晶体管的实际潜力.
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