本文主要介绍了绝缘层在薄膜晶体管中的重要作用,总结了在薄膜晶体管中应用的绝缘层材料种类及其特点,介绍了不同绝缘层的制备工艺,以及各种制备工艺的原理与特点.最后,通过分析近几年有关薄膜晶体管绝缘层的文献,介绍了薄膜晶体管在制备过程中遇到的主要问题及当前的研究热点,并对未来薄膜晶体管中绝缘层的制备工艺和绝缘材料的研究方向进行了展望.
参考文献
| [1] | O. Akhavan.The effect of heat treatment on formation of graphene thin films from graphene oxide nanosheets[J].Carbon: An International Journal Sponsored by the American Carbon Society,20102(2):509-519. |
| [2] | Shankar Swaminathan;Yun Sun;Piero Pianetta;Paul C. McIntyre.Ultrathin ALD-Al_(2)O_(3) layers for Ge(001) gate stacks: Local composition evolution and dielectric properties[J].Journal of Applied Physics,20119(9):094105-1-094105-6. |
| [3] | Dingemans G;Terlinden NM;Pierreux D;Profijt HB;van de Sanden MCM;Kessels WMM.Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3[J].Electrochemical and solid-state letters,20111(1):H1-H4. |
| [4] | Li Yang;Cheng-Wei Cheng;Mayank T. Bulsara;Eugene A. Fitzgerald.High mobility In_(0.53)Ga_(0.47)As quantum-well metal oxide semiconductor field effect transistor structures[J].Journal of Applied Physics,201210(10):104511-1-104511-5. |
| [5] | Sanghun Jeon;Sungho Park;Ihun Song.Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications[J].ACS applied materials & interfaces,20111(1):1-6. |
| [6] | Chung, D.S.;Lee, J.-S.;Huang, J.;Nag, A.;Ithurria, S.;Talapin, D.V..Low voltage, hysteresis free, and high mobility transistors from All-inorganic colloidal nanocrystals[J].Nano letters,20124(4):1813-1820. |
| [7] | Yan, H;Hanagata, H;Jo, T;Okuzaki, H.Low-Voltage Organic Field-Effect Transistors Fabricated on Self-Assembled-Monolayer-Free SrTiO3 Insulator[J].Japanese journal of applied physics,20111 Pt.3(1 Pt.3):01BC05:1-01BC05:4. |
| [8] | Tsuyoshi Sekitani;Ute Zschieschang;Hagen Klauk.Flexible organic transistors and circuits with extreme bending stability[J].Nature materials,201012(12):1015-1022. |
| [9] | Joon Seok Park;Wan-Joo Maeng;Hyun-Suk Kim;Jin-Seong Park.Review of recent developments in amorphous oxide semiconductor thin-film transistor devices[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,20126(6):1679-1693. |
| [10] | W. Ou-Yang;T. Uemura;K. Miyake;S. Onish;T. Kato;M. Katayama;M. Kang;K. Takimiya;M. Ikeda;H. Kuwabara;M. Hamada;J. Takeya.High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene[J].Applied physics letters,201222(22):223304-1-223304-5. |
| [11] | P. Kondaiah;V. Madhavi;M. Chandra Sekhar;G. Mohan Rao;S. Uthanna.Structural, Electrical and Dielectric Properties of Sputtered TiO_2 Films for Al/TiO_2/Si Capacitors[J].Science of advanced materials,20134(4):398-405. |
| [12] | Sathees Kannan Selvaraj;Gregory Jursich;Christos G. Takoudis.Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor[J].Review of Scientific Instruments,20139(9):095109-1-095109-7. |
| [13] | Pei Zhao;Akihiko Ito;Takashi Goto.Rapid deposition of YBCO films by laser CVD and effect of lattice mismatch on their epitaxial growth and critical temperature[J].CERAMICS INTERNATIONAL,20137(7):7491-7497. |
| [14] | Kromka, A.;Babchenko, O.;Izak, T.;Hruska, K.;Rezek, B..Linear antenna microwave plasma CVD deposition of diamond films over large areas[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,20126(6):776-779. |
| [15] | Kyung Min Kim;Chi Wan Kim;Jae-Seok Heo;Hyungil Na;Jung Eun Lee;Chang Bum Park;Jong-Uk Bae;Chang-Dong Kim;Myungchul Jun;Yong Kee Hwang;Stephen T. Meyers;Andrew Grenville;Douglas A. Keszler.Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors[J].Applied physics letters,201124(24):242109-1-242109-3. |
| [16] | Heiji Watanabe;Takuji Hosoi;Takashi Kirino;Yusuke Kagei;Yusuke Uenishi;Atthawut Chanthaphan;Akitaka Yoshigoe;Yuden Teraoka;Takayoshi Shimura.Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO_(2)/4H-SiC(0001) interface and its correlation with electrical properties[J].Applied physics letters,20112(2):021907-1-021907-3. |
| [17] | Cheng, Z.;Zhou, Q.;Li, Q.;Wang, C.;Fang, Y..Toward intrinsic graphene surfaces: A systematic study on thermal annealing and wet-chemical treatment of SiO2-supported graphene devices[J].Nano letters,20112(2):767-771. |
| [18] | Yong-Hoon Kim;Jae-Sang Heo;Tae-Hyeong Kim;Sungjun Park;Myung-Han Yoon;Jiwan Kim;Min Suk Oh;Gi-Ra Yi;Yong-Young Noh;Sung Kyu Park.Flexible metal-oxide devices made by room- temperature photochemical activation of sol-gel films[J].Nature,2012Sep.6 TN.7414(Sep.6 TN.7414):128-132. |
| [19] | Chengmin Ji;Zhihua Sun;Shu-Quan Zhang.AMsopropylbenzylammonium tetrafluoroborate: an organic dielectric relaxor with a tunable transition between high and low dielectric states[J].Journal of Materials Chemistry, C. materials for optical and electronic devices,20143(3):567-572. |
| [20] | Xiaoli Xu;Qingyu Cui;Yizheng Jin;Xiaojun Guo.Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 ℃[J].Applied physics letters,201222(22):222114-1-222114-3. |
| [21] | Kulbinder K. Banger;Rebecca L. Peterson;Kiyotaka Mori.High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors[J].Chemistry of Materials: A Publication of the American Chemistry Society,20142(2):1195-1203. |
| [22] | Myung-Gil Kim;Mercouri G. Kanatzidis;Antonio Facchetti.Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing[J].Nature materials,20115(5):382-388. |
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