氮化镓薄膜生长工艺研究的最新进展

稀有金属, 1998, 22(2): 138-142. doi: 10.3969/j.issn.0258-7076.1998.02.015

氮化镓薄膜生长工艺研究的最新进展

赵谢群 ^1, , 张燕红 ^2, , 邱向东 ^3, , 孙晋伟 ^4,

1.北京有色金属研究总院,北京100088

2.北京有色金属研究总院,北京100088

3.北京有色金属研究总院,北京100088

4.北京科技大学

关键词： GaN , 薄膜 , 外延生长 , 活化氮源

Developments of Epitaxial Growth of Gallium Nitride Thin Films

综述了高质量GaN薄膜材料生长工艺的最新进展,着重阐明金属有机物汽相沉积工艺以及以活性氮为前体的分子束外延工艺的应用.

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氮化镓薄膜生长工艺研究的最新进展

Developments of Epitaxial Growth of Gallium Nitride Thin Films

参考文献