硅片的直接键合

稀有金属, 1998, 22(5): 380-384. doi: 10.3969/j.issn.0258-7076.1998.05.013

硅片的直接键合

王敬 ^1, , 屠海令 ^2, , 刘安生 ^3, , 张椿 ^4, , 周旗钢 ^5, , 朱悟新 ^6,

1.北京有色金属研究总院,北京,100088

2.北京有色金属研究总院,北京,100088

3.北京有色金属研究总院,北京,100088

4.北京有色金属研究总院,北京,100088

5.北京有色金属研究总院,北京,100088

6.北京有色金属研究总院,北京,100088

关键词：硅片 , 硅片键合 , 直接键合

Direct Bonding of Silicon Wafers

介绍了硅片的直接键合工艺、键合机理、键合质量评价方法以及键合技术目前的研究和应用状况等.

参考文献

[1]	Lasky J B .[J].Applied Physics Letters,1986,48:78.
[2]	Shimbo M;Furukawa K;Fukuda K;Tanzawa K .[J].Journal of Applied Physics,1986,60:2987.
[3]	Gosele U;Stenzel H;Reiche M;Martini T,Steinkirchner H and Tong Q Y Richter H ,Kittler M and Claeys C .Proceedings of Gettering and Defect Engineering in Semiconductor Technology,Berlin,Germany,September 2-7,1995[J].Solid State Phenomena,1996,47-48:33.
[4]	Tong Q Y;Gosele U .[J].Materials Chemistry and Physics,1994,37:101.
[5]	Bollmann D;Landesberger C;Ramm P;Haberger K .[J].Japanese Journal of Applied Physics,1996,35:3807.
[6]	Ljungberg K;Soderbarg A;Backlund Y .[J].Applied Physics Letters,1993,62:1362.
[7]	Himi H;Matsui M;Fujino S;Hattori T .[J].Japanese Journal of Applied Physics,1994,33:6.
[8]	Tong Q Y;Schmidt E;Gosele U;Reiche M .[J].Applied Physics Letters,1994,64:625.
[9]	Bengtsson S;Ljungberg K;Vedde J .[J].Applied Physics Letters,1996,69(22):3381.
[10]	Lehmann V;Gosele U;Mitani K.[J].Solid State Technology,1990(04):91.
[11]	Mitani K;Lehmann V;Stengl R;Feijoo D,Gosele U and Massoud H .[J].Japanese Journal of Applied Physics,1991,30:615.
[12]	Tong QY.;Gosele U. .A MODEL OF LOW-TEMPERATURE WAFER BONDING AND ITS APPLICATIONS[J].Journal of the Electrochemical Society,1996(5):1773-1779.
[13]	Kissinger G;Kissinger W .[J].Sensors and Actuators A-Physical,1993,36:149.
[14]	Suga T;Takahashi Y;Takagi H;Gibbesch B and Elssner G .[J].Acta Metallurgica Et Materialia,1992,40:133.
[15]	Gosele U;Stenzel H;Martini T;Steinkirchner J,Conrad D and Scheerschmidt .[J].Applied Physics Letters,1995,67:3614.
[16]	Takagi H;Kikuchi;Maeda R;Chung T R and Suga T .[J].Applied Physics Letters,1996,68:2222.
[17]	Shi F;Elssner G;Riche M;Gosele U M,Richter H,Kittler M and Claeys C .Proceedings of Gettering and Defect Engineering in Semiconductor Technology,Berlin,Germany,September 2-7,1995[J].Solid State Phenomena,1996,47-48:143.
[18]	Reiche M;Tong Q Y;Gosele U et al.[J].Materials Science Forum,1995,196-201:1847.
[19]	Tong QY.;Gosele U.;Reiche M.;Ramm J.;Beck E.;Lee TH. .THE ROLE OF SURFACE CHEMISTRY IN BONDING OF STANDARD SILICON WAFERS[J].Journal of the Electrochemical Society,1997(1):384-389.
[20]	Bengtsson S;Engstrom .[J].Journal of Applied Physics,1989,66:1231.
[21]	Ljungberg K.;Bengtsson S.;Soderbarg A.;Jansson U. .MODIFICATION OF SILICON SURFACES WITH H2SO4-H2O2-HF AND HNO3-HF FOR WAFER BONDING APPLICATIONS[J].Journal of the Electrochemical Society,1996(5):1709-1714.
[22]	Maszara W P;Goetz G;Caviglia A;Mckitterick J B .[J].Journal of Applied Physics,1988,64:4943.
[23]	Martini T.;Gosele U.;Steinkirchner J. .THE CRACK OPENING METHOD IN SILICON WAFER BONDING - HOW USEFUL IS IT[J].Journal of the Electrochemical Society,1997(1):354-357.
[24]	Roberds BE.;Farrens SN. .AN ATOMIC FORCE MICROSCOPY STUDY ON THE ROUGHNESS OF SILICON WAFERS CORRELATED WITH DIRECT WAFER BONDING[J].Journal of the Electrochemical Society,1996(7):2365-2371.
[25]	Black R D;Arthur S D;Gilmore R S;Lewis N,Hall E L and Lillquist D .[J].Journal of Applied Physics,1988,63:2773.
[26]	Auberton-Herve A J;Nishimura T .[J].Solid State Technology,1994,7:89.
[27]	Esashi M;Nakano A;Shoji S;Hebiguchi H .[J].Sensors and Actuators A:Physical,1990,21-23:931.
[28]	Grekhov I V;Argunova T S;Gutkin M Y;Kostina L S and Kudryavtzeva T V .[J].Materials Science Forum,1995,196-201:1853.
[29]	Haisma J;Spierings B A C M;Biermann U K P;Pals J A .[J].Japanese Journal of Applied Physics,1989,28:1426.
[30]	Lehmann V;Mitani K;Stengl R;Mii T and Gosele U .[J].Japanese Journal of Applied Physics,1989,28:L2141.
[31]	Babic D I;Dudley J J;Streubel K et al.[J].Japanese Journal of Applied Physics,1995,66:1030.
[32]	Alexe M;Kastner G;Hesse D;Gosele U .Ferroelectric-semiconductor heterostructures obtained by direct wafer bonding[J].Applied physics letters,1997(25):3416-3418.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

硅片的直接键合

Direct Bonding of Silicon Wafers

参考文献