重掺碲(100) GaSb 单晶的研制

1.北京有色金研究总院,北京,100088

2.北京有色金研究总院,北京,100088

3.北京有色金研究总院,北京,100088

4.北京有色金研究总院,北京,100088

Preparation of Heavily Te-doped GaSb Single Crystal

采用 LEC 工艺,通过特殊的过滤措施,可以批量拉制重掺碲的 GaSb 单晶材料.计算结果表明,在该生长系统及工艺条件下,碲在 GaSb 中的有效分凝系数约为0.38.GaSb 单晶 EPD 测试表明:EPD 沿径向分布呈"W"型,数量约为1×103cm-2;沿晶体生长方向(100)变化不大.

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