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  4. 单晶硅内氢杂质特性研究进展

稀有金属, 2001, 25(6): 452-458. doi: 10.3969/j.issn.0258-7076.2001.06.013

单晶硅内氢杂质特性研究进展

李传波 1, , 李怀祥 2, , 刁兆玉 3,

1.山东师范大学半导体研究所

2.山东师范大学半导体研究所

3.山东师范大学化学系

基金项目:   国家自然科学基金(69971014)  

关键词： 单晶硅 , 氢 , 氢退火 , 红外光谱 , 缺陷

Progress of research on hydrogen impurity in single crystalline silicon

从单晶硅内氢杂质的引入,氢钝化施主,钝化受主,钝化缺陷等几方面对近年来单晶硅内氢杂质的特性研究进行了综述,强调了氢加速氧扩散、加速热施主与氧沉淀的形成等性质,讨论了氢在单晶硅内的存在状态及硅片在氢气氛中的退火特性.

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