系统介绍了直拉重掺硼(B)硅单晶研究的最新进展.主要内容包括重掺B硅单晶的基本性质,利用重掺B籽晶进行无缩颈硅单晶生长技术,重掺B硅单晶的机械性能,重掺B硅单晶中的氧和氧沉淀,以及B的大量掺杂与大直径直拉硅单晶中空洞型(Void)原生缺陷的控制关系.在此基础上,探讨了当前直拉重掺B硅单晶生产和研究中存在的主要问题.
参考文献
[1] | 蒋志.超大规模集成电子学微结构科学[M].北京:科学出版社,1987:205. |
[2] | 阙端麟.硅材料科学与技术[M].杭州:浙江大学出版社,2000:49. |
[3] | Taishi T.;Kubota M.;Kajigaya T.;Fukami T.;Hoshikawa K.;Huang XM. .Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(2/3):169-172. |
[4] | Taishi T;Huang X;Kubota M et al.Heavily bron doped silicon single crystal Growthboron segregation[J].Japanese Journal of Applied Physics,1999,38:223. |
[5] | Taishi T.;Kubota M.;Kajigaya T.;Fukami T.;Hoshikawa K.;Huang XM. .Heavily boron-doped silicon single crystal growth: Constitutional supercooling[J].Japanese journal of applied physics,2000(1AB):L5-L8. |
[6] | Huang X;Taishi T;Yonenage I et al.Dislocation free czochralskli silicon crystal growth without dash necking[J].Japanese Journal of Applied Physics,2001,40:12. |
[7] | Huang X;Taishi T;Yonenaga I et al.Dislocation free B doped Si crystal growth without Dash necking in Czochralski methodinfluence of B comcentration[J].Journal of Crystal Growth,2000,213:283. |
[8] | Huang X;Taishi T;Yonenaga I et al.Dislocation free czochralskli silicon crystal growth without dash necking using a heavily B and Ce codoped Si seed[J].Japanese Journal of Applied Physics,2000,391:115. |
[9] | YU G;Watanabe J;Izumi K et al.Mechanical property characterization of boron doped silicon by berkovich type indenter[J].Japanese Journal of Applied Physics,2001,40:183. |
[10] | Yamada K;Nakanishi K;Kobayashi H et al.Crystal growth of completely dislocation free and striation free GaAs[J].Journal of Crystal Growth,1986,78:36. |
[11] | Abe K.;Maeda S.;Nakanishi H.;Hoshikawa K.;Terashima K.;Matsumoto T. .OXYGEN SOLUBILITY IN SI MELTS - INFLUENCE OF BORON ADDITION[J].Journal of Crystal Growth,1997(1/2):41-47. |
[12] | Choe K .Oxygen incroporation and precipitation behavior in heavily boron doped Czochralski silicon crystal[J].Journal of Crystal Growth,1995,147:55. |
[13] | Walitzki H;Rath H;Reffle J.Control of oxygen and precipotation behavior of heavily doped silicon substrate materials[A].The Electrochem.Soc.,Pennington.NJ,1986:86. |
[14] | Ono T;Asayama E;Horie B et al.Behavior of defects in heavily boron doped Czochralski silicon[J].Japanese Journal of Applied Physics,1997,36:249. |
[15] | Liu C;Wang H;Li Y et al.Study of the oxygen reduction in heavily Sb doped silicon[J].Journal of Crystal Growth,1999,196:111. |
[16] | 阙端麟.硅材料科学与技术[M].杭州:浙江大学出版社,2000:498. |
[17] | Hahn S;Ponce F;Siojanoff V et al.Effects of heavy boron doping upon oxygen precipitation in Czochralski silicon[J].Journal of Applied Physics,1988,64:4454. |
[18] | Wijaranakula W .Morphology of oxide precipitates in Czochralski silicon degenerately doped with boron[J].Journal of Applied Physics,1992,72:4026. |
[19] | Dornberger E.;Suhren M.;Lambert U.;Wagner P.;Dupret F. Vonammon W.;Graf D. .INFLUENCE OF BORON CONCENTRATION ON THE OXIDATION-INDUCED STACKING FAULT RING IN CZOCHRALSKI SILICON CRYSTALS[J].Journal of Crystal Growth,1997(3/4):343-352. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%