用磁控溅射方法制备了系列(Fe0.86Zr0.033Nb0.033B0.068Cu0.01)x(Al2O3)1-x颗粒膜样品, 体积百分比x从0.33~0.63, 样品厚度约为100 nm. 室温下在Fe0.86Zr0.033Nb0.033B0.068Cu0.01体积百分比x=0.43时得到17.5 μΩ*cm的最大饱和霍耳电阻率, 比纯铁磁金属提高了3~4个量级. 对其磁性和微结构进行了研究, 样品霍耳电阻率随外场的变化曲线ρxy~H与磁场平行于膜面时的磁化曲线M~H有相似性, 说明霍尔电阻率ρxy与磁化强度M相关. 样品电阻率ρxx随金属体积百分比x的减小而增加, 在x=0.43附近发生突变, 从金属导电变为绝缘体. 根据微结构和输运性质对可能的机制进行了探讨.
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