提出一种通过对溅射Ga2O3薄膜后氮化技术制备GaN纳米结构的方法,已成功地制备出 GaN 纳米线、纳米棒和纳米带.该方法既不需要催化剂,也不需要模板限制,不仅避免了杂质污染,而且简化了纳米结构的制造工艺,对于纳米结构的应用非常有利.利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和选区电子衍射(SAD)研究了 GaN 纳米结构的形貌和晶格结构.结果表明 GaN 纳米结构是具有六角纤锌矿结构的 GaN 晶体,不存在 Ga2O3 或 Ga 的其他相.研究结果证明在高温氮化过程中由于晶格缺陷的降低和晶化的改进能够得到高质量的 GaN 晶体.简要地讨论了GaN 纳米结构的生长机制.
参考文献
| [1] | Nakamura S .The roles of structural imperfection in InGaN-based blue light-emitting diods and laser diods[J].Science,1998,281:956. |
| [2] | Shi WS.;Wang N.;Lee CS.;Lee ST.;Zheng YF. .Microstructures of gallium nitride nanowires synthesized by oxide-assisted method[J].Chemical Physics Letters,2001(5-6):377-380. |
| [3] | Morales A M;Lieber C M .A laser ablation method for the synthesis of crystalline semiconductor nanowires[J].Science,1998,281:956. |
| [4] | Han W Q;Fan S S;Li Q Q et al.Synthesis of gallium nitride nanorods trough a carbon nanotube-confined reaction[J].Science,1997,277(29):1287. |
| [5] | Duan XF.;Lieber CM. .Laser-assisted catalytic growth of single crystal GaN nanowires[J].Journal of the American Chemical Society,2000(1):188-189. |
| [6] | Cheng G S;Chen S H;Zhu X G et al.Highly ordered nanostructures of single crystalline GaN nanowires[J].Materials Science and Engineering A,2000,286:165. |
| [7] | Yang YG.;Ma HL.;Xue CS.;Zhuang HZ.;Hao XT.;Ma J. .Investigation of preparation and characterization of GaN films on sapphire (0001) substrates[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(3/4):295-300. |
| [8] | Yang YG.;Ma HL.;Xue CS.;Zhuang HZ.;Hao XT.;Ma J.;Teng SY. .Preparation and structural properties for GaN films grown on Si (111) by annealing[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(1/4):254-260. |
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