太赫兹场作用下GaAs 量子阱的光吸收研究

1.中科院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050

2.中科院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050

基金项目: 上海市光科技专项基金(011661075) 国家自然科学基金(20001CCA02800G,20000683)

Optical Absorption in Terahertz-Driven GaAs Quantum Well

用密度矩阵理论,研究了在超快脉冲及太赫兹场作用下GaAs量子阱的光吸收谱.在直流和太赫兹场作用下,由于量子约束斯塔克效应,光吸收谱呈现出多个激子吸收峰.改变太赫兹的强度和频率,吸收谱出现恶歇分裂,并产生边带.这些分裂主要来源于太赫兹作用下激子的非线性效应.

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